Special Notice NAICS 334413

High-Quality Superconducting ZrN Thin Films via Molecular Beam Epitaxy for Quantum Computing and Advanced Superconducting Technologies Description INL researchers have successfully established the parameters necessary for the deposition of high-quality superconducting zirconium nitride (ZrN) using molecular beam epitaxy (MBE). Key parameters include growth rate, temperature, flux ratios of zirconium (Zr) and nitrogen (N), and the choice of substrate. These parameters significantly impact the crystalline quality of the ZrN, which in turn affects its physical properties. Additionally, novel methods have been developed to induce unconventional superconductivity in conventional superconductors like ZrN. Key Benefits Superior Quality: MBE allows for fine-tuned growth parameters, resulting in top-quality, single-crystal ZrN superconducting films. Unconventional Superconductivity: Methods for inducing unconventional superconductivity in ZrN have been conceptualized, potentially enabling more fault-tolerant computing. Novel Application: ZrN has not previously been deposited using MBE, offering a unique advantage over existing superconducting thin films, which are often polycrystalline. Tun...

Notice ID: 1369da0b123d4b2caac7a87b82f8972a · View on SAM.gov ↗