Special Notice
NAICS 334413
Request for Information: U.S. on-shore Production-Level Back End of Line 300mm Wafer Fabrication Capability for Magnetic Tunnel Junction Technology Supporting ITAR Flow
N0016425SNB93 Request for Information: U.S. on-shore Production-Level Back End of Line 300mm Wafer Fabrication Capability for Magnetic Tunnel Junction Technology Supporting ITAR Flow PSC 5961 NAICS 334413 Issue Date: 12 September 2025 - Closing Date: 13 October 2025 Synopsis The Department of Navy is seeking information from industry stakeholders, including capital equipment manufacturers, semiconductor tool suppliers, and intellectual property licensors related to establishing a U.S. on-shore back end of line (BEOL) 300mm wafer production fabrication capability for Magnetoresistive Random Access Memory (MRAM) devices utilizing magnetic tunnel junction (MTJ) technology, with a focus on production foundry capabilities. This request for information (RFI) aims to support production of MRAM components to enhance national security applications, supply chain resilience, and defense system architectures. At a minimum, the envisioned U.S. on-shore MTJ fabrication capability shall meet the following requirements: shall be available for Department of Defense (DoD) programs requiring Defense Federal Acquisition Regulation Supplement (DFARS) compliance; shall accommodate procuring activitie...
Notice ID: 0a92f866231546828b3fd11cf1146a8a ·
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